| PART |
Description |
Maker |
| HYB5116400BJ-50 HYB5116400BJ-50- HYB5116400BJ-60 H |
4M x 4 Bit FPM DRAM 5 V 4k 60ns
4M x 4 Bit FPM DRAM 5 V 4k 50ns
-4M x 4-Bit Dynamic RAM
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYB514171BJ-50 HYB514171BJ-50- HYB514171BJ-60 Q671 |
256k x 16 Bit FPM DRAM 5 V 60 ns
256k x 16 Bit FPM DRAM 5 V 50 ns
256k x 16-Bit Dynamic RAM
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| MT4LC1M16C3DJ-6 MT4LC1M16C3DJ-6S MT4LC1M16C3TG-6 M |
FPM DRAM
|
MICRON[Micron Technology]
|
| MT4C16257 |
256K x 16 FPM DRAM(256K x 16快速页面模式动态RAM)
|
Micron Technology, Inc.
|
| HYM72V8010GS-60 HYM72V8010GS-50 HYM72V8000GS-60 HY |
8M x 72 Bit ECC FPM DRAM Module buffered
8M x 72-Bit Dynamic RAM Module (ECC - Module)
8M x 72-Bit Dynamic RAM Module 8米72位动态随机存储器模块
8M x 72-Bit Dynamic RAM Module 8M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
Connector; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes 8M X 72 FAST PAGE DRAM MODULE, 50 ns, DMA168
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40
4M X 4 OTHER DRAM, 70 ns, PDSO26
16M X 1 EDO DRAM, 60 ns, PDSO24
4M X 4 OTHER DRAM, 50 ns, PDSO26
16K X 4 CACHE SRAM, 10 ns, PDIP24
|
SIEMENS AG
|
| UNO-PCM21 UNO-PCM22 UNO-FPM21 UNO-FPM21-AE |
UNO & FPM integration kit
|
Advantech Co., Ltd.
http://
|
| ST62P03CM1/XXX ST62P03CM3/XXX ST62P03CM6/XXX ST620 |
Microcontroller 微控制器
512Mb DDR2 SDRAM Component
16Mb EDO/FPM - OBSOLETE
8-BIT MICROCONTROLLER
|
STMicroelectronics N.V.
|
| HYM64VX005GCL-60 HYM64VX005GCD-60 HYM64V2005GCD-60 |
2M X 64 EDO DRAM MODULE, 60 ns, ZMA144
4M X 64 EDO DRAM MODULE, 60 ns, ZMA144
144 pin SO-DIMM EDO-DRAM Modules 8MB , 16MB, 32MB & 64MB density
2M x 64 Bit EDO DRAM Module (SO-DIMM)...
4M x 64 Bit EDO DRAM Module (SO-DIMM)...
|
INFINEON TECHNOLOGIES AG
|
| GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| BC850CL BC849CL |
16Mb EDO/FPM - OBSOLETE
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | SOT-23 晶体管|晶体管|叩| 30V的五（巴西）总裁| 100mA的一（c）| SOT - 23封装
|
Electronic Theatre Controls, Inc.
|
| VG2618165DJ-5 |
DRAM Chip, EDO DRAM, 2MByte, 5V Supply, Commercial, SOJ, 42-Pin
|
Vanguard International Semiconductor
|
